THEORY OF OPTICAL GAIN AND THRESHOLD PROPERTIES OF SEMICONDUCTOR LASERS

被引：12

作者：

ALEKSANI.AG ^{[1
]}

POLUEKTO.IA ^{[1
]}

POPOV, YM ^{[1
]}

机构：

[1] ACAD SCI USSR,PN LEBEDEV PHYS INST,MOSCOW,USSR

来源：

关键词：

D O I：

10.1109/JQE.1974.1068141

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：297 / 305

页数：9

共 15 条

[1] ALEKSANIAN AG, 1972, 169 AC NAUK SSSR FIZ, P1
[2] ALEKSANIAN AG, 1971, KVANTOVAYA ELEKTRON, V3, P13
[3] ALEKSANIAN AG, 1973, KVANTOVAYA ELEKTRON, V3, P20
[4] BONCHBRUEVICH VL, 1967, FIZ TVERD TELA, P60
[5] EVGRAFOV NA, 1962, ASIMPTOTICHSKY OZENK
[6] Properties of spontaneous and stimulated emission in GaAs junction lasers. I. Densities of states in the active regions
Hwang, C. J.
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4117 - 4125
[7] KELDYSH LV, 1963, FIZ TVERD TELA, V5, P3378
[8] Krokhin O. N., 1965, FIZ TVERD TELA, V7, P2612
[9] PIKUS GE, 1965, OSNOVY FIZIKI POLUPR
[10] POPOV YM, 1965, T FIZ I ACAD NAUK SS