DELTA-DOPED TUNNEL-DIODE - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE

被引：5

作者：

GILMAN, JMA

ONEILL, AG

机构：

[1] Department of Electrical and Electronic Engineering, The University of Newcastle upon Tyne

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 09期

关键词：

Semiconductor devices and materials; Tunneldiodes;

D O I：

10.1049/el:19900395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel tunnel diode is proposed. Modulation doping is used to define a two dimensional electron or hole gas on either side of a p-n junction tunnelling barrier. The additional parameter of doping spike separation enables a wide range of I-V characteristics to be selected. This leads to a decoupling of the current peak and corresponding voltage. Improvements in current density and speed are predicted. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：601 / 602

页数：2

共 8 条

[1] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J].