AN ANALYSIS OF GAIN-SWITCHED SEMICONDUCTOR-LASERS GENERATING PULSE-CODE-MODULATED LIGHT WITH A HIGH BIT RATE

被引：33

作者：

DEMOKAN, MS

NACAROGLU, A

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT PHYS,OPT SECT,LONDON SW7 2AZ,ENGLAND

[2] MIDDLE E TECH UNIV,GAZIANTEP,TURKEY

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1984年 / 20卷 / 09期

关键词：

D O I：

10.1109/JQE.1984.1072515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1016 / 1022

页数：7

共 8 条

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[4]

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APPLIED PHYSICS LETTERS, 1983, 43 (01) :1-3

[7] LONGITUDINAL MODE SPECTRUM OF GAAS INJECTION-LASERS UNDER HIGH-FREQUENCY MICROWAVE MODULATION [J].

LAU, KY ;

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APPLIED PHYSICS LETTERS, 1983, 43 (07) :619-621

[8] SIMPLE PICOSECOND PULSE GENERATION SCHEME FOR INJECTION-LASERS [J].

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HARTMAN, RL .

ELECTRONICS LETTERS, 1980, 16 (15) :600-602

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