SUPERSHALLOW LEVELS IN INDIUM-DOPED SILICON

被引：8

作者：

CEROFOLINI, GF ^{[1
]}

PIGNATEL, GU ^{[1
]}

MAZZEGA, E ^{[1
]}

OTTAVIANI, G ^{[1
]}

机构：

[1] UNIV MODENA,DEPARTIMENTO FIS,I-41100 MODENA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 06期

关键词：

D O I：

10.1063/1.335988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2204 / 2207

页数：4

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