LINE-SHAPE MODEL FOR THE BROAD PHOTOLUMINESCENCE BAND FROM SI1-XGEX/SI HETEROSTRUCTURES

被引：16

作者：

HARTMANN, A ^{[1
]}

VESCAN, L ^{[1
]}

DIEKER, C ^{[1
]}

STOICA, T ^{[1
]}

LUTH, H ^{[1
]}

机构：

[1] INST PHYS & TECHNOL MAT, BUCHAREST, ROMANIA

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.48.18276

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence studies on Si1-xGex layers exceeding the critical thickness show not only dislocation-related peaks D1,...,D4, but also in addition a broad band (T band), centered at similar to 110 meV below the strained alloy band gap. Depth profiling studies show that the T band is due to centers in the Si1-xGex. The excitation power dependence and high quantum efficiency of the T band can be explained by assuming that it is due to an isoelectronically trapped exciton. T-band line shapes were fitted by a model based on statistical fluctuations of the Ge content and their effect on the local gap energy.

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页码：18276 / 18279

页数：4

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