IN0.53GA0.47AS N-CHANNEL NATIVE OXIDE INVERSION MODE FIELD-EFFECT TRANSISTOR

被引：21

作者：

LIAO, ASH

TELL, B

LEHENY, RF

CHANG, TY

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 03期

关键词：

D O I：

10.1063/1.93464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：280 / 282

页数：3

共 10 条

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J].

BANDY, S ;

NISHIMOTO, C ;

HYDER, S ;

HOOPER, C .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :817-819

[2] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRON DEVICE LETTERS, 1980, 1 (06) :110-111

[3] AN IN0.53 GA0.47 AS-SI3N4 N-CHANNEL INVERSION MODE MISFET [J].

LIAO, ASH ;

LEHENY, RF ;

NAHORY, RE ;

DEWINTER, JC .

ELECTRON DEVICE LETTERS, 1981, 2 (11) :288-290

[4]

MARSH JH, 1981, I PHYS C SER, V56, P621

[5] INCREASING EFFECTIVE BARRIER HEIGHT OF SCHOTTKY CONTACTS TO N-INXGA1-XAS [J].

MORGAN, DV ;

FREY, J .

ELECTRONICS LETTERS, 1978, 14 (23) :737-738

[6]

OCONNOR P, UNPUB ELECTRON LETT

[7] INGAASP NORMAL-CHANNEL INVERSION-MODE METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH LOW INTERFACE STATE DENSITY [J].

SHINODA, Y ;

KOBAYASHI, T .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6386-6394

[8]

SILBERG E, UNPUB

[9] NATIVE GROWN PLASMA OXIDES AND INVERSION-LAYERS ON INGAAS [J].

TELL, B ;

NAHORY, RE ;

LEHENY, RF ;

DEWINTER, JC .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :744-746

[10] INVERSION-MODE INSULATED GATE GA0.47IN0.53AS FIELD-EFFECT TRANSISTORS [J].

WIEDER, HH ;

CLAWSON, AR ;

ELDER, DI ;

COLLINS, DA .

ELECTRON DEVICE LETTERS, 1981, 2 (03) :73-74

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