ROOM-TEMPERATURE OPERATION OF MOCVD-GROWN GAINAS/INP STRAINED-LAYER MULTIQUANTUM WELL LASERS IN 1-BULLET-8-MU-M RANGE

被引：13

作者：

FOROUHAR, S ^{[1
]}

LARSSON, A ^{[1
]}

KSENDZOV, A ^{[1
]}

LANG, RJ ^{[1
]}

TOTHILL, N ^{[1
]}

SCOTT, MD ^{[1
]}

机构：

[1] EPITAXIAL PROD INT LTD,CARDIFF,WALES

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 10期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920599

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first successful room-temperature pulsed operation is reported of InGaAs strained layer multiquantum well (SL-MQW) injection lasers grown by MOVPE on InP substrates in the 1.8-mu-m range. The threshold current density and the external differential quantum efficiency of the 10-mu-m wide ridge waveguide lasers were 2.5kA/cm2 (cavity length = 1mm) and 5% (cavity length = 400-mu-m), respectively. Broad-area lasers, 100-mu-m wide and 1 mm long, had a reverse leakage current of less than 10-mu-A at -1V indicating high quality of the epitaxial layers.

引用

页码：945 / 947

页数：3

共 9 条

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[2]

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[3]

BOUR DP, 1991, ELECTRON LETT, V28, P37

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