EMITTER EFFICIENCY OF SILICON TRANSISTORS

被引：19

作者：

WILSON, BLH ^{[1
]}

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 01期

关键词：

D O I：

10.1016/0038-1101(77)90036-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：71 / 74

页数：4

共 15 条

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[6]

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[7] CALCULATION OF EMITTER EFFICIENCY OF BIPOLAR TRANSISTORS [J].

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DEMAN, HJ ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) :772-778

[8] TRANSPORT EQUATIONS IN HEAVILY DOPED SILICON, AND CURRENT GAIN OF A BIPOLAR TRANSISTOR [J].

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SOLID-STATE ELECTRONICS, 1973, 16 (11) :1251-1259

[9]

MORGAN TN, 1965, PHYS REV A, V139, P343

[10]

PEART RF, 1973, C RADIATION DAMAGE R, P170

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