SCHOTTKY PROBE MAGNETIC SENSOR OF VERY HIGH SENSITIVENESS

被引：6

作者：

CHRETIEN, J ^{[1
]}

KAMARINOS, G ^{[1
]}

VIKTOROVITCH, P ^{[1
]}

机构：

[1] INPG,ELECTR LAB,EQUIPE RECH 659,PHYS COMPOSANTS SEMICONDUCTEURS GRP,F-38031 GRENOBLE,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1977年 / 12卷 / 10期

关键词：

D O I：

10.1051/rphysap:0197700120100169900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1699 / 1703

页数：5

共 23 条

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BEER, AC
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (05) : 339 - &
[2] APPLICATIONS OF HALL EFFECT
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[J]. SOLID-STATE ELECTRONICS, 1966, 9 (05) : 361 - &
[3] BUYLEBODIN M, TO BE PUBLISHED
[4] SEMICONDUCTOR ABNORMAL MAGNETORESISTANCE RESULTING FROM SURFACE EFFECT FREQUENCY RESPONSE AND CARRIERS EFFECTIVE LIFETIME
CHOVET, A
KAMARINOS, G
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1971, 6 (03): : 345 - +
[5] CHRETIEN J, 1976, DEA ENSER GRENOBLE
[6] EGIAZARYAN GA, 1976, SOV PHYS SEMICOND, V9, P829
[7] KAMARINOS G, 1970, CR ACAD SCI B PHYS, V270, P1163
[8] KAMARINOS G, 1977, 2ND INT C TECHN SOL, P164
[9] KAMARINOS G, 1974, THESIS GRENOBLE
[10] KARAKUSHAN EI, 1976, SOV PHYS SEMICOND, V9, P953