共 13 条
[1]
DONOR BOUND-EXCITON EXCITED-STATES IN ZINC SELENIDE
[J].
PHYSICAL REVIEW B,
1981, 23 (10)
:4888-4901
[2]
COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS
[J].
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,
1984, 81 (02)
:625-646
[5]
COHERENT GROWTH OF ZNSE ON GAAS BY MOCVD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1985, 24 (08)
:L578-L580
[6]
HOMOEPITAXIAL AND HETEROEPITAXIAL GROWTH OF HIGH-QUALITY ZNSE BY MOLECULAR-BEAM EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (06)
:1637-1640
[7]
MOLECULAR-BEAM EPITAXY GROWTH OF ZNSE ON (100)GAAS BY COMPOUND SOURCE AND SEPARATE SOURCE EVAPORATION - A COMPARATIVE-STUDY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
:676-680
[10]
HIGH-PURITY ZNSE GROWN BY LIQUID-PHASE EPITAXY
[J].
APPLIED PHYSICS LETTERS,
1981, 38 (07)
:540-542