INFLUENCE OF CARRIER RECOMBINATION ON THE PULSED PHOTOTHERMAL BEAM DEFLECTION SIGNAL IN SEMICONDUCTORS

被引：11

作者：

PETROVSKY, AN

SALNICK, AO

ZUEV, VV

MUKHIN, DO

MEKHTIEV, MM

PELZL, J

BOCCARA, AC

FOURNIER, D

机构：

[1] Solid State Physics Department, Moscow Physics Engineering Institute, 115409 Moscow

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 81卷 / 03期

关键词：

D O I：

10.1016/0038-1098(92)90503-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of carrier recombination on the thermal response of pulsed photothermal beam deflection (PBD) signal in Si is analyzed theoretically and experimentally. This effect appears in the form of small depression in PBD - signal time dependence at a depths closer to the thermal diffusion length. The carrier lifetime value is found to be evaluated from this depression time position.

引用

页码：223 / 225

页数：3