MICROSTRUCTURE CHANGE IN SIC WHISKERS AFTER HIGH-TEMPERATURE ANNEALING

被引：5

作者：

ZHOU, YC

CHANG, X

ZHOU, J

XIA, F

SHIH, CH

机构：

[1] Institute of Metal Research, Academia Sinica, Shenyang

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1991年 / 63卷 / 01期

关键词：

D O I：

10.1080/09500839108206596

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The microstructure of as-received and post-annealed SiC whiskers were investigated by transmission electron microscopy. In the as-received SiC whiskers, the thinner beta-SiC parts were jointed with the one-dimensional disordered parts by {111}, twin boundaries. After annealing, beta-SiC parts became coarser than the one-dimensional disordered parts at 1900-degrees-C and then disappeared at 2000-degrees-C.

引用

页码：19 / 22

页数：4

共 5 条

[1] TOUGHENING BEHAVIOR IN WHISKER-REINFORCED CERAMIC MATRIX COMPOSITES [J].