ION DAMAGE CALCULATIONS IN CRYSTALLINE SILICON

被引：6

作者：

OEN, OS

机构：

[1] Oak Ridge Natl Lab, Oak Ridge, TN,, USA, Oak Ridge Natl Lab, Oak Ridge, TN, USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 13卷 / 1-3期

关键词：

The use of ion implantation for the controlled introduction of dopants into semiconductors has stimulated much interest in the lattice damage introduced by the implanted ions ([I] and references therein). A detailed understanding of the nature of this damage and its spatial extent is needed in order to help develop techniques to remove it efficiently [Z-4]. Almost all calculations on the damage or energy loss profiles assume the slowing down of an ion in a random or amorphous medium. A major exception is the computer program MARLOWE [5; 6]* *; which treats crys:al-line material. In studies of ion produced damage in crystalline media; it is important to realize that ion channeling may affect the results. In channeling; the ion is constrained to move in the more open avenues of the crystal; thus greatly reducing the probability of violent collisions; which produce cascade damage. In addition; damage may be introduced at much greater depths than in an amorphous target. This can occur when long range channeled ions dechannel shortly before stopping. Effects of channeling on damage production were predicted [7] and experimentally confirmed [S] many years ago. Recently 19-111; there has been an interest in trying to characterize and quantify some of the channeling factors that affect damage production. Once these factors are quantified; it should * Research sponsored by the Division of Materials Sciences; US Department of Energy under contract DE-ACOS-~ORZl4~ with Martin Marietta Energy Systems; Inc. ** Ref. 161: this guide describes a version of the program which isavailable from the National Energy Software Center; Argonne Nationai Laboratory; Argonne; Illinois; 60439; and from the Radiation Shielding Information Center; Oak Ridge National Laboratory; PO Box X; Oak Ridge; Tennes-see; 37831; USA;

D O I：

10.1016/0168-583X(86)90554-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：495 / 498

页数：4

共 20 条

[1] RECOIL CONTRIBUTION TO ION-IMPLANTATION ENERGY-DEPOSITION DISTRIBUTIONS [J].

BRICE, DK .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3385-3394

[2]

Chadderton L. T., 1971, Radiation Effects, V8, P77, DOI 10.1080/00337577108231012

[3]

Firsov O.B., 1957, ZH EKSP TEOR FIZ+, V33, P696

[4] FEATURES OF COLLISION CASCADES IN SILICON AS DETERMINED BY TRANSMISSION ELECTRON-MICROSCOPY [J].

HOWE, LM ;

RAINVILLE, MH .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :143-151

[5] SPATIAL CHARACTERISTICS OF LOW-KEV ION-BOMBARDMENT INDUCED DAMAGE IN CRYSTALS [J].

KARPUZOV, DS ;

ARMOUR, DG .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (04) :853-862

[6]

LINDHARD J, 1965, VID SELSK MAT FYS ME, V35

[7]

LINDHARD J, 1963, VID SELSK MAT FYS ME, V33

[8] MONTE-CARLO SIMULATION OF CHANNELING EFFECTS ON RECOIL MOTION [J].

MAZZONE, AM .

RADIATION EFFECTS LETTERS, 1984, 86 (06) :191-197

[9]

MICHEL AE, 1985, APPL PHYS LETT, V44, P404

[10]

MOLIERE G, 1947, Z NATURFORSCH A, V2, P133

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