NEW INSIGHT INTO PROTON-INDUCED LATCHUP - EXPERIMENT AND MODELING

被引：22

作者：

LEVINSON, J ^{[1
]}

AKKERMAN, A ^{[1
]}

VICTORIA, M ^{[1
]}

HASS, M ^{[1
]}

ILBERG, D ^{[1
]}

ALURRALDE, M ^{[1
]}

HENNECK, R ^{[1
]}

LIFSHITZ, Y ^{[1
]}

机构：

[1] COMIS NACL ENERGIA ATOM,RA-1429 BUENOS AIRES,DF,ARGENTINA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 21期

关键词：

D O I：

10.1063/1.110283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A combination of irradiation experiments (using energetic protons and heavy ions) and a theoretical.analysis was used, for the first time, to study proton induced single event latchup (SEL) in electronic devices. A significant difference between SEL and single event upset (SEU) was found. For SEU the device sensitivity can be predicted by a model assuming the collection of the majority of the charge carriers generated in the sensitive volume by the nuclear fragments of the (p,Si) reactions. For SEL, the measured sensitivities are much lower than predicted by prompt charge collection. Recombination of charge carriers (generated by the heavier fragments) due to a track electric field reasonably explains the SEL data.

引用

页码：2952 / 2954

页数：3

共 15 条

[1] A VERIFIED PROTON-INDUCED LATCH-UP IN SPACE [J].

ADAMS, L ;

DALY, EJ ;

HARBOESORENSEN, R ;

NICKSON, R ;

HAINES, J ;

SCHAFER, W ;

CONRAD, M ;

GRIECH, H ;

MERKEL, J ;

SCHWALL, T ;

HENNECK, R .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) :1804-1808

[2]

AKKERMAN A, 1993, IN PRESS P NATO ADV

[3]

AKKERMAN A, 1991, P RADECS 91, V15, P509

[4] NUCLEAR AND DAMAGE EFFECTS IN SI PRODUCED BY IRRADIATIONS WITH MEDIUM ENERGY PROTONS [J].

ALURRALDE, M ;

VICTORIA, M ;

CARO, A ;

GAVILLET, D .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) :1210-1215

[5] A MODEL FOR PROTON-INDUCED SEU [J].

BION, T ;

BOURRIEAU, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) :2281-2286

[6] STATISTICAL-MODELS OF FRAGMENTATION PROCESSES [J].

GOLDHABER, AS .

PHYSICS LETTERS B, 1974, B 53 (04) :306-308

[7] LATCHUP IN CMOS FROM SINGLE PARTICLES [J].

JOHNSTON, AH ;

HUGHLOCK, BW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) :1886-1893

[8] RADIAL ENERGY-TRANSFER DENSITY DISTRIBUTION AROUND THE FAST ION TRACKS IN SILICON AND GERMANIUM [J].

KHLUPIN, SI ;

AKKERMAN, AF .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 158 (01) :63-66

[9]

KOBETICH EY, 1963, PHYS REV, V170, P391

[10]

MARKOVITS C, UNPUB

← 1 2 →