RADIATIVE RECOMBINATION LIFETIMES IN LASER-EXCITED SILICON - (PHOTOCONDUCTIVITY - PHOTOLUMINESCENCE - RADIATIVE DECAY LIFETIME[2X10-8 SEC - POSSIBLE METHOD FOR STUDY OF LASER PULSE SHAPE - E)

被引:6
作者
WINOGRADOFF, NN
KESSLER, HK
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D O I
10.1063/1.1754506
中图分类号
O59 [应用物理学];
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页码:99 / +
页数:1
相关论文
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GASOV NG, 1963, SOV PHYS DOKL, V8, P290
[2]  
HAYNES JR, 1959, 3 P INT C SEM, P392
[3]  
WINOGRADOFF NN, 1965, PHYS REV, V138, P1562
[4]   LIGHT EMISSION AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL GAAS LASERS AND TUNNEL DIODES [J].
WINOGRADOFF, NN ;
KESSLER, HK .
SOLID STATE COMMUNICATIONS, 1964, 2 (04) :119-122
[5]  
1961, P IRE, V49, P1292