RESONANT INJECTION QUANTUM-WELL DIODES AND LASERS

Simple modifications of the standard GaAs-GaAlAs double barrier tunneling diode and quantum well laser structures are considered. Calculations show that by replacing the outer GaAs layers of the diode the negative resistance can be increased. A similar structure is formed if thin high aluminum content barriers are added on one or both sides of the quantum well in a quantum well laser. The barriers then create a resonance in the well region. The alloy concentration outside of the barriers can be chosen to line up the incoming electron energy with the resonance, creating a greatly enhanced charge density in the well. Electrons are thereby captured by the well more efficiently and threshold currents may be lowered.