ATOMIC LAYER EPITAXY GROWTH OF ALN THIN-FILMS

被引：22

作者：

ELERS, KE ^{[1
]}

RITALA, M ^{[1
]}

LESKELA, M ^{[1
]}

JOHANSSON, LS ^{[1
]}

机构：

[1] ABO AKAD UNIV, MAT RES CTR, SF-20520 TURKU, FINLAND

来源：

JOURNAL DE PHYSIQUE IV | 1995年 / 5卷 / C5期

关键词：

D O I：

10.1051/jphyscol:19955120

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

AlN thin films were grown by the Atomic Layer Epitaxy (ALE) technique employing AlCl3 and NH3 as precursors. A growth rate of 1.0 Angstrom/cycle was obtained in experiments carried out at 500 degrees C. The films deposited onto soda lime glass substrates were polycrystalline exhibiting a strong preferred orientation in the [001] direction. X-ray Photoelectron Spectroscopy (XPS) measurements revealed that the films contained oxygen and chlorine as impurities.

引用

页码：1021 / 1027

页数：7