GENERATION OF MICROPATTERNS IN POLY(3-METHYL-THIOPHENE) FILMS USING MICROLITHOGRAPHY - A 1ST STEP IN THE DESIGN OF AN TOTALLY ORGANIC THIN-FILM TRANSISTOR

A thin-film transistor structure was designed using poly(3-methyl-thiophene) in its oxidized (highly conducting: sigma approximately equals 2 multiplied by 10**4 S/m) state as source and drain contacts, and the same material in its reduced (semiconducting: sigma approximately equals 10** minus **7 S/m) state as channel. The source, drain and channel zones can be defined by means of electrochemical and microlithographic procedures. The ultimate resolution is in the submicron range.