BAND-STRUCTURE ANALYSIS FROM ELECTRO-REFLECTANCE STUDIES

[1] Bardeen J., 1956, PHOT C NEW YORK, P146

[2] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &

[3] OPTICAL ABSORPTION IN AN ELECTRIC FIELD [J]. PHYSICAL REVIEW, 1963, 130 (02): : 549 - &

[4] OPTICAL ABSORPTION IN ELECTRIC FIELD [J]. PHYSICAL REVIEW, 1964, 134 (4A): : A998 - +

[5] FUNDAMENTAL REFLECTIVITY SPECTRUM OF SEMICONDUCTORS WITH ZINC-BLENDE STRUCTURE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2151 - &

[6] ABSORPTION SPECTRUM OF GERMANIUM AND ZINC-BLENDE-TYPE MATERIALS AT ENERGIES HIGHER THAN FUNDAMENTAL ABSORPTION EDGE [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) : 813 - &

[7] ELECTROABSORPTION SPECTRUM IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1964, 13 (06) : 193 - &

[8] SPECTRAL ANALYSIS OF PHOTOEMISSIVE YIELDS IN SI GE GAAS GASB INAS AND INSB [J]. PHYSICAL REVIEW, 1965, 139 (3A): : A912 - &

[9] EFFECT OF SURFACE DAMAGE ON REFLECTANCE OF GERMANIUM IN 2650-10 000-A REGION [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1963, 53 (12) : 1403 - &

[10] INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (02) : 59 - &

[1] Bardeen J., 1956, PHOT C NEW YORK, P146

[2] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &

[3] OPTICAL ABSORPTION IN AN ELECTRIC FIELD [J]. PHYSICAL REVIEW, 1963, 130 (02): : 549 - &

[4] OPTICAL ABSORPTION IN ELECTRIC FIELD [J]. PHYSICAL REVIEW, 1964, 134 (4A): : A998 - +

[5] FUNDAMENTAL REFLECTIVITY SPECTRUM OF SEMICONDUCTORS WITH ZINC-BLENDE STRUCTURE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2151 - &

[6] ABSORPTION SPECTRUM OF GERMANIUM AND ZINC-BLENDE-TYPE MATERIALS AT ENERGIES HIGHER THAN FUNDAMENTAL ABSORPTION EDGE [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) : 813 - &

[7] ELECTROABSORPTION SPECTRUM IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1964, 13 (06) : 193 - &

[8] SPECTRAL ANALYSIS OF PHOTOEMISSIVE YIELDS IN SI GE GAAS GASB INAS AND INSB [J]. PHYSICAL REVIEW, 1965, 139 (3A): : A912 - &

[9] EFFECT OF SURFACE DAMAGE ON REFLECTANCE OF GERMANIUM IN 2650-10 000-A REGION [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1963, 53 (12) : 1403 - &

[10] INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (02) : 59 - &