CAPTURE INTO DEEP ELECTRONIC STATES IN SEMICONDUCTORS

被引：26

作者：

MORGAN, TN

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 28卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.28.7141

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7141 / 7174

页数：34

共 26 条

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