THE DONOR LEVEL OF VANADIUM IN INP

被引：12

作者：

DEVEAUD, B

PLOT, B

LAMBERT, B

BREMOND, G

GUILLOT, G

NOUAILHAT, A

CLERJAUD, B

NAUD, C

机构：

[1] INST NATL SCI APPL LYON, F-69621 VILLEURBANNE, FRANCE

[2] UNIV PARIS 06, OPT MAT CONDENSEE LAB, UA 800, F-75230 PARIS 05, FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 09期

关键词：

D O I：

10.1063/1.336890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3126 / 3130

页数：5

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