MOLECULAR DESIGN OF HOLE TRANSPORT MATERIALS FOR OBTAINING HIGH DURABILITY IN ORGANIC ELECTROLUMINESCENT DIODES

被引:412
作者
ADACHI, C
NAGAI, K
TAMOTO, N
机构
[1] Chemical Products RandD Center, Ricoh Co., Ltd., Numazu-shi, Shizuoka 410
关键词
D O I
10.1063/1.113123
中图分类号
O59 [应用物理学];
学科分类号
摘要
The molecular design of hole transport materials (HTMs) for producing high durability in organic layered electroluminescent (EL) diodes was elucidated. The durability tests were examined using fourteen hole transport materials in the cell structure of an anode/hole transport layer (HTL)/emitter layer (EML)/cathode. The ionization potential (Ip) of HTLs was found to be the dominant factor for obtaining high durability in organic EL devices. The formation of the small energy barrier at the interface of a HTL/anode was required for high durability. Moreover, no straightforward relations between melting point, glass transition temperature of the HTMs, and durability of the EL devices were observed. The EL device using the HTM having a low Ip (5.08 eV) showed an especially remarkable stability. In this case, the half-life period of the initial luminance was beyond 500 h. © 1995 American Institute of Physics.
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页码:2679 / 2681
页数:3
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