NEW APPROACH TO THE HIGH-QUALITY EPITAXIAL-GROWTH OF LATTICE-MISMATCHED MATERIALS

被引:325
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LURYI, S
SUHIR, E
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10.1063/1.97204
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O59 [应用物理学];
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页码:140 / 142
页数:3
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共 9 条
[1]  
BEAN JC, 1985, MATER RES SOC S P, V37, P245
[2]  
DAVITAYA FA, COMMUNICATION
[3]  
DAVITAYA FA, 1985, 1ST INT S MBE TOR CA, P323
[4]   A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON [J].
IMAI, K .
SOLID-STATE ELECTRONICS, 1981, 24 (02) :159-&
[5]  
Landau L. D., 1965, THEORY ELASTICITY
[6]  
LIN TL, 1985, 1ST P INT S SIL MOL, P316
[7]   CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].
PEOPLE, R ;
BEAN, JC .
APPLIED PHYSICS LETTERS, 1985, 47 (03) :322-324
[8]  
SUHIR E, UNPUB J APPL MECH
[9]  
SUHIR E, 1986, UNPUB SPR P MRS M PA