THERMOELECTRIC-POWER OF SI-AS-TE AND GE-AS-TE GLASSES

被引：16

作者：

TOHGE, N ^{[1
]}

MINAMI, T ^{[1
]}

TANAKA, M ^{[1
]}

机构：

[1] UNIV OSAKA,COLL ENGN,DEPT APPL CHEM,SAKAI,OSAKA 591,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.16.977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：977 / 979

页数：3

共 10 条

[1] Flasck R., 1972, J NON-CRYST SOLIDS, V8, P326
[2] Minami T., 1970, Journal of Non-Crystalline Solids, V3, P327, DOI 10.1016/0022-3093(70)90003-7
[3] MINAMI T, 1974, 10TH P INT C GLASS K, P91
[4] MINAMI T, 1969, YOGYO KYOKAI SHI, V77, P372
[5] MINAMI T, 1970, YOGYO KYOKAI SHI, V78, P299
[6] MOTT NF, 1971, ELECTRONIC PROCESSES, P219
[7] DC ELECTRONIC TRANSPORT IN BINARY ARSENIC CHALCOGENIDE GLASSES
SEAGER, CH
QUINN, RK
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1975, 17 (03) : 386 - 400
[8] ELECTRICAL TRANSPORT AND STRUCTURAL-PROPERTIES OF BULK AS-TE-I, AS-TE-GE, AND AS-TE CHALCOGENIDE GLASSES
SEAGER, CH
EMIN, D
QUINN, RK
[J]. PHYSICAL REVIEW B, 1973, 8 (10): : 4746 - 4760
[9] SMITH RA, 1968, SEMICONDUCTORS, pCH6
[10] Strunk R., 1973, Journal of Non-Crystalline Solids, V12, P168, DOI 10.1016/0022-3093(73)90066-5