GROUND-STATE ENERGY OF AN EXCITON BOUND TO AN IONIZED DONOR IMPURITY IN TWO-DIMENSIONAL SEMICONDUCTORS

被引:18
作者
STEBE, B
STAUFFER, L
机构
[1] ECOLE SUPER ELECT,F-57078 METZ 3,FRANCE
[2] UNIV HAUTE ALSACE,FAC SCI & TECH,PHYS SOLIDE LAB,F-68093 MULHOUSE,FRANCE
关键词
D O I
10.1016/0749-6036(89)90331-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:451 / 453
页数:3
相关论文
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