INVARIANT-PLANE AND INVARIANT-LINE DEFORMATION CRITERIA AND THEIR APPLICATION TO INTERFACE CRYSTALLOGRAPHY

被引：16

作者：

KATO, M

机构：

[1] Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 227, 4259 Nagatsuta, Midori-Ku

来源：

MATERIALS TRANSACTIONS JIM | 1992年 / 33卷 / 02期

关键词：

CRYSTALLOGRAPHY; GEOMETRY; INTERFACE; INVARIANT-PLANE DEFORMATION; INVARIANT-LINE DEFORMATION; ORIENTATION RELATIONSHIP; LATTICE CORRESPONDENCE; MARTENSITIC TRANSFORMATION; EPITAXY; THIN FILM;

D O I：

10.2320/matertrans1989.33.89

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Simple geometrical approaches to interface crystallography based on the invariant-plane and invariant-line deformation criteria have been overviewed. Using matrix algebra, the mathematical implications of these criteria are first discussed. To elucidate the physical meaning and the applicability of the invariant-plane deformation criterion, the re-formulation procedure of the phemonemological crystallographic theories of martensitic transformations using the infinitesimal-deformation approach is surveyed. As the application of the invariant-line deformation criterion, epitaxial relationships between deposit thin-film crystals and substrate crystals are analyzed. It has been demonstrated that these simple geometrical criteria are very useful in explaining various features of the crystallography of interfaces.

引用

页码：89 / 96

页数：8

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