ROLE OF CORRELATIONS IN (GASB)1-XGE2X ALLOYS

[1] ALFEROV ZI, 1982, SOV PHYS SEMICOND+, V16, P567

[2] [Anonymous], ELECTRONIC STRUCTURE

[3] GROWTH AND OPTICAL-PROPERTIES OF SINGLE-CRYSTAL METASTABLE (GAAS)1-XGEX ALLOYS [J]. ELECTRONICS LETTERS, 1982, 18 (20) : 891 - 892

[4] BARNETT SA, 1984, LAYERED STRUCTURES E

[5] BESERMAN R, 1985, 17TH P INT C PHYS SE, P961

[6] ISING MODEL FOR LAMBDA TRANSITION AND PHASE SEPARATION IN HE-3-HE-4 MIXTURES [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1971, 4 (03): : 1071 - +

[7] BUNKER BA, 1984, EXAFS NEAR EDGE STRU, V3, P482

[8] GROWTH OF SINGLE-CRYSTAL METASTABLE SEMICONDUCTING (GASB)1-XGEX FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 773 - 775

[9] MAXIMUM-ENTROPY METHOD FOR ELECTRONIC-PROPERTIES OF ALLOYS [J]. PHYSICAL REVIEW B, 1986, 34 (06): : 3567 - 3571

[10] PROPERTIES OF (GAAS)1-XGE2X AND (GASB)1-XGE2X - CONSEQUENCES OF A STOCHASTIC GROWTH-PROCESS [J]. PHYSICAL REVIEW B, 1987, 35 (06): : 2767 - 2780

[1] ALFEROV ZI, 1982, SOV PHYS SEMICOND+, V16, P567

[2] [Anonymous], ELECTRONIC STRUCTURE

[3] GROWTH AND OPTICAL-PROPERTIES OF SINGLE-CRYSTAL METASTABLE (GAAS)1-XGEX ALLOYS [J]. ELECTRONICS LETTERS, 1982, 18 (20) : 891 - 892

[4] BARNETT SA, 1984, LAYERED STRUCTURES E

[5] BESERMAN R, 1985, 17TH P INT C PHYS SE, P961

[6] ISING MODEL FOR LAMBDA TRANSITION AND PHASE SEPARATION IN HE-3-HE-4 MIXTURES [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1971, 4 (03): : 1071 - +

[7] BUNKER BA, 1984, EXAFS NEAR EDGE STRU, V3, P482

[8] GROWTH OF SINGLE-CRYSTAL METASTABLE SEMICONDUCTING (GASB)1-XGEX FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 773 - 775

[9] MAXIMUM-ENTROPY METHOD FOR ELECTRONIC-PROPERTIES OF ALLOYS [J]. PHYSICAL REVIEW B, 1986, 34 (06): : 3567 - 3571

[10] PROPERTIES OF (GAAS)1-XGE2X AND (GASB)1-XGE2X - CONSEQUENCES OF A STOCHASTIC GROWTH-PROCESS [J]. PHYSICAL REVIEW B, 1987, 35 (06): : 2767 - 2780