DETERMINATION OF CARRIER LIFETIME IN SI BY OPTICAL MODULATION

被引：20

作者：

POLLA, DL ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 06期

关键词：

D O I：

10.1109/EDL.1983.25698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：185 / 187

页数：3

相关论文

共 9 条

[1] MEASUREMENT OF FREE-CARRIER LIFETIMES IN GAP BY PHOTOINDUCED MODULATION OF INFRARED ABSORPTION
AFROMOWITZ, MA
DIDOMENICO, M
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) : 3205 - +
[2] QUANTITATIVE-DETERMINATION OF THE CARRIER CONCENTRATION DISTRIBUTION IN SEMICONDUCTORS BY SCANNING IR ABSORPTION - SI
JASTRZEBSKI, L
LAGOWSKI, J
GATOS, HC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 260 - 263
[3] LIFETIME MEASUREMENT IN HG0.7CD0.3TE BY POPULATION MODULATION
MROCZKOWSKI, JA
SHANLEY, JF
REINE, MB
LOVECCHIO, P
POLLA, DL
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (04) : 261 - 263
[4] OBSERVATION OF DEEP LEVELS IN HG1-XCDXTE WITH OPTICAL MODULATION SPECTROSCOPY
POLLA, DL
AGGARWAL, RL
MROCZKOWSKI, JA
SHANLEY, JF
REINE, MB
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 338 - 340
[5] ROSS B, 1980, ASTM STP AM SOC TEST, V712, P14
[6] SILICON OPTICAL CONSTANTS IN INFRARED
SCHUMANN, PA
KEENAN, WA
TONG, AH
GEGENWARTH, HH
SCHNEIDER, CP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 145 - +
[7] MEASUREMENT OF MINORITY CARRIER LIFETIME IN GERMANIUM
VALDES, LB
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1420 - 1423
[8] WIEDER AW, 1978, UNPUB IEEE INT ELECT, P460
[9] 5 STANF U PROC ENG M