WIDE-RANGE, LOW-OPERATING-VOLTAGE, BIMORPH STM - APPLICATION AS POTENTIOMETER

被引：79

作者：

MURALT, P

POHL, DW

DENK, W

机构：

[1] IBM CORP,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

[2] CORNELL UNIV,DEPT PHYS,ITHACA,NY 14853

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1986年 / 30卷 / 05期

关键词：

D O I：

10.1147/rd.305.0443

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：443 / 450

页数：8

共 10 条

[1]

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[8] SCANNING TUNNELING MICROSCOPE COMBINED WITH A SCANNING ELECTRON-MICROSCOPE [J].

GERBER, C ;

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[9] SCANNING TUNNELING POTENTIOMETRY [J].

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POHL, DW .

APPLIED PHYSICS LETTERS, 1986, 48 (08) :514-516

[10] SOME DESIGN CRITERIA IN SCANNING TUNNELING MICROSCOPY [J].

POHL, DW .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1986, 30 (04) :417-427

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