DEFECT FORMATION DURING MBE GROWTH OF HGTE ON CDTE

被引：12

作者：

SCHAAKE, HF

KOESTNER, RJ

机构：

[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

CRYSTALS - Epitaxial Growth - MERCURY COMPOUNDS - MICROSCOPIC EXAMINATION - Transmission Electron Microscopy - MOLECULAR BEAM EPITAXY;

D O I：

10.1016/0022-0248(90)90758-D

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

HgTe grown by MBE onto CdTe substrates under excess Hg conditions was found to lead to a columnar void-twin microstructure, with the twins nucleating from the voids. Grown under Hg-deficient conditions, the microstructure of MBE HgTe consisted of columnar polycrystals. Nucleation of the polycrystals occurred only at the commencement of growth. Possible growth and twinning mechanisms are discussed.

引用

页码：452 / 459

页数：8

共 6 条

[1]

CHEW NG, 1985, APPL PHYS LETT, V45, P1090

[2] LATEST DEVELOPMENTS IN THE GROWTH OF CDXHG1-XTE AND CDTE-HGTE SUPER-LATTICES BY MOLECULAR-BEAM EPITAXY [J].