GENERALIZED-MODEL FOR THE OPTICAL-ABSORPTION EDGE IN A-SI-H

[1] EFFECT OF SITE DISORDER ON THE OPTICAL-ABSORPTION EDGE OF A-SI-HX [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 325 - 328

[2] CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11

[3] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (20) : 1480 - 1483

[4] OPTICAL-ABSORPTION IN AMORPHOUS-SEMICONDUCTORS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 171 - 174

[5] ELECTRICAL-CONDUCTIVITY OF P-TYPE CUINSE2 THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1102 - 1104

[6] DATTA T, 1987, B AM PHYS SOC, V32, P679

[7] FEROVA A, 1985, TETRAHEDRALLY BONDED, P271

[8] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (07) : 769 - 772

[9] Mott N, 1979, ELECT PROCESSES NONC

[10] DEFECTS IN AMORPHOUS-SILICON - A NEW PERSPECTIVE [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (23) : 2979 - 2982

[1] EFFECT OF SITE DISORDER ON THE OPTICAL-ABSORPTION EDGE OF A-SI-HX [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 325 - 328

[2] CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11

[3] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (20) : 1480 - 1483

[4] OPTICAL-ABSORPTION IN AMORPHOUS-SEMICONDUCTORS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 171 - 174

[5] ELECTRICAL-CONDUCTIVITY OF P-TYPE CUINSE2 THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1102 - 1104

[6] DATTA T, 1987, B AM PHYS SOC, V32, P679

[7] FEROVA A, 1985, TETRAHEDRALLY BONDED, P271

[8] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (07) : 769 - 772

[9] Mott N, 1979, ELECT PROCESSES NONC

[10] DEFECTS IN AMORPHOUS-SILICON - A NEW PERSPECTIVE [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (23) : 2979 - 2982