THE INFLUENCE OF THERMAL DISORDER ON THE ABSORPTION-EDGE IN THE TAUC REGION OF A-SI-H

被引:10
作者
BINDEMANN, R
PAETZOLD, O
机构
[1] Sektion Physik, Technischen Universität Dresden
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 160卷 / 02期
关键词
D O I
10.1002/pssb.2221600252
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
[No abstract available]
引用
收藏
页码:K183 / K188
页数:6
相关论文
共 13 条
[1]   INTERBAND ABSORPTION-SPECTRA OF DISORDERED SEMICONDUCTORS IN THE COHERENT POTENTIAL APPROXIMATION [J].
ABE, S ;
TOYOZAWA, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1981, 50 (07) :2185-2194
[2]  
CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11
[3]   DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J].
CODY, GD ;
TIEDJE, T ;
ABELES, B ;
BROOKS, B ;
GOLDSTEIN, Y .
PHYSICAL REVIEW LETTERS, 1981, 47 (20) :1480-1483
[4]  
Cohen M. L., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P155
[5]  
ECKLER M, 1988, THESIS TU MAGDEBURG
[6]  
Frova A., 1985, TETRAHEDRALLY BONDED, P271
[7]   TEMPERATURE-DEPENDENCE OF THE URBACH OPTICAL-ABSORPTION EDGE - A THEORY OF MULTIPLE PHONON ABSORPTION AND EMISSION SIDEBANDS [J].
GREIN, CH ;
JOHN, S .
PHYSICAL REVIEW B, 1989, 39 (02) :1140-1151
[8]   EFFECTS OF ACOUSTIC-PHONON AND OPTICAL-PHONON SIDEBANDS ON THE FUNDAMENTAL OPTICAL-ABSORPTION EDGE IN CRYSTALS AND DISORDERED SEMICONDUCTORS [J].
GREIN, CH ;
JOHN, S .
PHYSICAL REVIEW B, 1990, 41 (11) :7641-7646
[9]   INTERBAND OPTICAL-ABSORPTION IN AMORPHOUS-SILICON [J].
KRUZELECKY, RV ;
UKAH, C ;
RACANSKY, D ;
ZUKOTYNSKI, S ;
PERZ, JM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1988, 103 (2-3) :234-249
[10]   DETERMINATION OF THE THICKNESS AND OPTICAL-CONSTANTS OF AMORPHOUS-SILICON [J].
SWANEPOEL, R .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1983, 16 (12) :1214-1222