REACTIVE SCATTERING OF O-2 WITH THE SI(111) SURFACE - RESONANCE-ENHANCED MULTIPHOTON IONIZATION OF SIO

被引：9

作者：

NAKAMURA, KG

KITAJIMA, M

机构：

[1] National Research Institute for Metals, Tsukuba, Ibaraki 305

来源：

JOURNAL OF CHEMICAL PHYSICS | 1995年 / 102卷 / 21期

关键词：

D O I：

10.1063/1.468846

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Reactive scattering of a pulse O2 beam with a Si(111) surface at the substrate temperature of 1250±50 K has been studied with the resonance enhanced multiphoton ionization (REMPI) mass spectroscopy. Only the SiO molecule has been observed as a reaction product. REMPI spectra of the desorbing SiO molecule shows its cooler rotational temperature compared with its vibrational temperature and the surface temperature. © 1995 American Institute of Physics.

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页码：8569 / 8573

页数：5

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