MEASUREMENT AND ANALYSIS OF CHARGE INJECTION IN MOS ANALOG SWITCHES

被引：92

作者：

SHIEH, JH

PATIL, M

SHEU, BJ

机构：

[1] UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90089

[2] UNIV SO CALIF,INST INFORMAT SCI,LOS ANGELES,CA 90089

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1987年 / 22卷 / 02期

关键词：

D O I：

10.1109/JSSC.1987.1052713

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：277 / 281

页数：5

共 8 条

[1]

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[7] MEASUREMENT AND MODELING OF CHARGE FEEDTHROUGH IN N-CHANNEL MOS ANALOG SWITCHES [J].

WILSON, WB ;

MASSOUD, HZ ;

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GEORGE, RT ;

FAIR, RB .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (06) :1206-1213

[8] A MOS SWITCHED-CAPACITOR INSTRUMENTATION AMPLIFIER [J].

YEN, RC ;

GRAY, PR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (06) :1008-1013

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