RESISTIVITY DECREASE DUE TO ELECTRON-SPIN RESONANCE IN METALLIC REGION OF HEAVILY PHOSPHORUS-DOPED SILICON

被引：8

作者：

KISHIMOTO, N ^{[1
]}

MORIGAKI, K ^{[1
]}

机构：

[1] UNIV TOKYO, INST SOLID STATE PHYS, TOKYO 106, JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1977年 / 42卷 / 01期

关键词：

D O I：

10.1143/JPSJ.42.137

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：137 / 145

页数：9

共 20 条

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[9] RESISTIVITY DECREASE DUE TO ELECTRON-SPIN RESONANCE IN METALLIC REGION OF HEAVILY PHOSPHORUS DOPED SILICON [J].

MORIGAKI, K ;

KISHIMOTO, N ;

LEPINE, DJ .

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[10]

MORIGAKI K, 1975, SUP PROG THEOR PHYS, P146, DOI 10.1143/PTPS.57.146

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