INFLUENCE OF CARBON AND PREANNEALING ON THE FORMATION OF OXYGEN-INDUCED RECOMBINATION CENTERS IN HEAT-TREATED SILICON

被引：4

作者：

BORIMSKII, VV

GLINCHUK, KD

LITOVCHENKO, NM

SALNIK, ZA

机构：

[1] Acad of Sciences of the Ukrainian, SSR, Inst of Semiconductors,Kiev,, USSR, Acad of Sciences of the Ukrainian SSR, Inst of Semiconductors,Kiev, USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 86卷 / 02期

关键词：

CARBON - Applications - CRYSTALS - Dislocations - ETCHING - HEAT TREATMENT - Annealing - SEMICONDUCTOR MATERIALS - Doping;

D O I：

10.1002/pssa.2210860219

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of carbon on the formation of oxygen-induced recombination centres at 450 and 650 degree C and of 450 degree C preannealing on the formation of oxygen-induced recombination centres at 650 degree C is studied in silicon crystals of varying oxygen content. It is found: a moderate amount of carbon atoms promotes the formation of oxygen-related recombination centres at 650 degree C; a high amount of carbon atoms suppresses the formation of oxygen-related recombination centres at 450 and 650 degree C; prolonged 450 degree C preannealing of silicon promotes the formation of oxygen-induced recombination centres at 650 degree C (the effect of preannealing is stronger for crystals with a moderate amount of carbon atoms). The results found are explained in terms of generation (by carbon) and preannealing of nucleation sites for oxygen-related recombination centres.

引用

页码：623 / 627

页数：5

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