DOMINATION OF THE THERMIONIC-FIELD EMISSION IN THE REVERSE IV CHARACTERISTICS OF N-TYPE GAAS SCHOTTKY CONTACTS

被引:40
作者
HORVATH, ZJ
机构
关键词
D O I
10.1063/1.342012
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:6780 / 6784
页数:5
相关论文
共 15 条
[1]   WSIO.11 SCHOTTKY GATES FOR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].
CALLEGARI, A ;
SPIERS, GD ;
MAGERLEIN, JH ;
GUTHRIE, HC .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :2054-2058
[2]   CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS [J].
CHANG, CY ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :727-+
[3]   ON THE CHOICE OF APPROPRIATE IONIZATION COEFFICIENTS FOR BREAKDOWN VOLTAGE CALCULATIONS [J].
GOUD, CB ;
BHAT, KN .
SOLID-STATE ELECTRONICS, 1987, 30 (08) :787-792
[4]  
Horvath Z. J., 1987, Crystal Properties and Preparation, V12, P273
[5]   GAAS SCHOTTKY VARACTORS FOR LINEAR FREQUENCY TUNING IN X-BAND [J].
HORVATH, ZJ ;
GYURO, I ;
NEMETHSALLAY, M ;
SZENTPALI, B ;
KAZI, K .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (02) :719-726
[7]  
HORVATH ZJ, 1987, SEP P S EL TECHN BUD, V2, P212
[8]   ELECTRICAL STUDY OF SCHOTTKY BARRIERS ON ATOMICALLY CLEAN GAAS(110) SURFACES [J].
NEWMAN, N ;
VANSCHILFGAARDE, M ;
KENDELWICZ, T ;
WILLIAMS, MD ;
SPICER, WE .
PHYSICAL REVIEW B, 1986, 33 (02) :1146-1159
[9]   FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].
PADOVANI, FA ;
STRATTON, R .
SOLID-STATE ELECTRONICS, 1966, 9 (07) :695-&
[10]   CONDUCTION MECHANISM IN SCHOTTKY DIODES [J].
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (10) :1920-+