ATOMIC LAYER EPITAXY OF CD1-XMNXTE GROWN ON CDTE (111)B SUBSTRATES

[1] STUDY OF ZNTE FILMS GROWN ON GLASS SUBSTRATES USING AN ATOMIC LAYER EVAPORATION METHOD [J]. THIN SOLID FILMS, 1980, 65 (03) : 301 - 307

[2] DILUTED MAGNETIC SEMICONDUCTORS - AN INTERFACE OF SEMICONDUCTOR PHYSICS AND MAGNETISM [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7637 - 7643

[3] CHARACTERIZATION OF SURFACE EXCHANGE-REACTIONS USED TO GROW COMPOUND FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 131 - 132

[4] PESSA M, APPL PHYS LETT

[5] PESSA M, UNPUB J CRYSTAL GROW

[6] SCHLESSINGER GG, 1971, CRC HDB CHEM PHYSICS, pD146

[7] Suntola T, 1977, U.S. Patent, Patent No. [4058430, 4,058,430]

[8] [No title captured]

[1] STUDY OF ZNTE FILMS GROWN ON GLASS SUBSTRATES USING AN ATOMIC LAYER EVAPORATION METHOD [J]. THIN SOLID FILMS, 1980, 65 (03) : 301 - 307

[2] DILUTED MAGNETIC SEMICONDUCTORS - AN INTERFACE OF SEMICONDUCTOR PHYSICS AND MAGNETISM [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7637 - 7643

[3] CHARACTERIZATION OF SURFACE EXCHANGE-REACTIONS USED TO GROW COMPOUND FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 131 - 132

[4] PESSA M, APPL PHYS LETT

[5] PESSA M, UNPUB J CRYSTAL GROW

[6] SCHLESSINGER GG, 1971, CRC HDB CHEM PHYSICS, pD146

[7] Suntola T, 1977, U.S. Patent, Patent No. [4058430, 4,058,430]

[8] [No title captured]