CONDUCTANCE FLUCTUATIONS AND 1/F NOISE IN BI

被引:44
作者
BIRGE, NO
GOLDING, B
HAEMMERLE, WH
机构
[1] MICHIGAN STATE UNIV,DEPT PHYS & ASTRON,E LANSING,MI 48824
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 05期
关键词
D O I
10.1103/PhysRevB.42.2735
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The 1/f resistance noise of Bi films has been measured as a function of temperature and magnetic field over the ranges 0.3300 K and 08 T, respectively. As the temperature decreases below 70 K, the noise increases, and at 1 K it is larger than at room temperature. Below 20 K the noise magnitude is reduced by a factor of 2 in the presence of a perpendicular magnetic field of magnitude 0/L2, where 0 is the flux quantum, and L is the phase-breaking length. These phenomena show that below about 70 K the noise is enhanced by the interference of the conduction electrons on the scale of L, as described by Feng, Lee, and Stone. © 1990 The American Physical Society.
引用
收藏
页码:2735 / 2743
页数:9
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