MECHANISM AND CONSEQUENCES OF SURFACE RECONSTRUCTION ON THE CLEAVAGE FACES OF WURTZITE-STRUCTURE COMPOUND SEMICONDUCTORS

[1] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2074 - 2082

[2] CALCULATION OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM ZNO (1010) .2. INFLUENCE OF CALCULATIONAL PROCEDURE, MODEL POTENTIAL, AND 2ND-LAYER STRUCTURAL DISTORTIONS [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4225 - 4240

[3] DUKE CB, 1987, SURFACE PROPERTIES E, pCH3

[4] ELECTRONIC-STRUCTURE OF IDEAL AND RELAXED SURFACES OF ZNO - A PROTOTYPE IONIC WURTZITE SEMICONDUCTOR AND ITS SURFACE-PROPERTIES [J]. PHYSICAL REVIEW B, 1981, 24 (12) : 7275 - 7296

[5] SEMICONDUCTOR SURFACE STRUCTURES [J]. SURFACE SCIENCE REPORTS, 1983, 3 (4-5) : 193 - 300

[6] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1974, 9 (02): : 600 - 621

[7] CALCULATION OF THE ATOMIC GEOMETRIES OF THE (110) SURFACES OF III-V COMPOUND SEMICONDUCTORS [J]. SURFACE SCIENCE, 1985, 149 (2-3) : 366 - 380

[8] Mark P., 1975, Critical Reviews in Solid State Sciences, V5, P189, DOI 10.1080/10408437508243480

[9] WANG Y, IN PRESS SURF SCI

[10] WANG Y, IN PRESS PHYS REV B

[1] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2074 - 2082

[2] CALCULATION OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM ZNO (1010) .2. INFLUENCE OF CALCULATIONAL PROCEDURE, MODEL POTENTIAL, AND 2ND-LAYER STRUCTURAL DISTORTIONS [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4225 - 4240

[3] DUKE CB, 1987, SURFACE PROPERTIES E, pCH3

[4] ELECTRONIC-STRUCTURE OF IDEAL AND RELAXED SURFACES OF ZNO - A PROTOTYPE IONIC WURTZITE SEMICONDUCTOR AND ITS SURFACE-PROPERTIES [J]. PHYSICAL REVIEW B, 1981, 24 (12) : 7275 - 7296

[5] SEMICONDUCTOR SURFACE STRUCTURES [J]. SURFACE SCIENCE REPORTS, 1983, 3 (4-5) : 193 - 300

[6] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1974, 9 (02): : 600 - 621

[7] CALCULATION OF THE ATOMIC GEOMETRIES OF THE (110) SURFACES OF III-V COMPOUND SEMICONDUCTORS [J]. SURFACE SCIENCE, 1985, 149 (2-3) : 366 - 380

[8] Mark P., 1975, Critical Reviews in Solid State Sciences, V5, P189, DOI 10.1080/10408437508243480

[9] WANG Y, IN PRESS SURF SCI

[10] WANG Y, IN PRESS PHYS REV B