DEFECT PROFILING OF SEMICONDUCTOR EPILAYERS USING POSITRON BEAMS

被引：21

作者：

TANDBERG, E

SCHULTZ, PJ

AERS, GC

JACKMAN, TE

机构：

[1] UNIV WESTERN ONTARIO,CTR CHEM PHYS,LONDON N6A 3K7,ONTARIO,CANADA

[2] NATL RES COUNCIL CANADA,MICROSTRUCT SCI LAB,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1989年 / 67卷 / 04期

关键词：

D O I：

10.1139/p89-048

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：275 / 282

页数：8

共 39 条

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