KINETICS AND MECHANISMS OF HIGH-TEMPERATURE CREEP IN SILICON-CARBIDE .2. CHEMICALLY VAPOR-DEPOSITED

被引：116

作者：

CARTER, CH ^{[1
]}

DAVIS, RF ^{[1
]}

BENTLEY, J ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,DIV MET & CERAM,OAK RIDGE,TN 37830

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1984年 / 67卷 / 11期

关键词：

D O I：

10.1111/j.1151-2916.1984.tb19510.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：732 / 740

页数：9

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