ROOM-TEMPERATURE MICROINDENTATION OF SINGLE-CRYSTAL MOSI2

被引：31

作者：

BOLDT, PH

EMBURY, JD

WEATHERLY, GC

机构：

[1] Department of Materials Science and Engineering, McMaster University, Hamilton, Ont. L8S 4L7

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1992年 / 155卷 / 1-2期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1016/0921-5093(92)90331-T

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Single crystals of MoSi2 have been grown by the Czochralski method and characterized by X-ray and transmission electron microscopy (TEM) methods. The mechanical properties have been studied at room temperature using indentation testing coupled with TEM methods which investigate the region below the indentation. The plastic zone below the indentation as been characterized in terms of the distribution of two different types of dislocations. In addition the fracture of MoSi2 has been studied as a function of indentation size.

引用

页码：251 / 258

页数：8

共 16 条

[1]

ARGON A, 1959, P R SOC LONDON A, V250, P474

[2] CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE STUDY OF THE GROWTH-KINETICS OF HEXAGONAL MOSI2 ON (001)SI [J].