LINE-SHAPE ANALYSIS OF REFLECTANCE SPECTRA FROM GAAS ALAS MULTIPLE-QUANTUM-WELL STRUCTURES

被引：33

作者：

TERZIS, AF

LIU, XC

PETROU, A

MCCOMBE, BD

DUTTA, M

SHEN, H

SMITH, DD

COLE, MW

TAYSINGLARA, M

NEWMAN, PG

机构：

[1] SUNY BUFFALO, CTR ELECTR & ELECTROOPT MAT, BUFFALO, NY 14260 USA

[2] USA, ELECTR TECHNOL & DEVICES LAB, FT MONMOUTH, NJ 07703 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 05期

关键词：

D O I：

10.1063/1.345501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reflectance spectra from six GaAs/AlAs multiple-quantum-well structures have been analyzed with a multilayer classical dielectric function model which describes in detail the propagation of light through these microstructures. The model predicts accurately the observed line shapes. It can be used for the analysis of the reflectance or transmission spectra of any semiconductor multilayer structure.

引用

页码：2501 / 2505

页数：5

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