MOCVD PRECURSORS AND REACTIONS MECHANISM

被引：8

作者：

KUZNETSOV, FA

IGUMENOV, IK

DANILOVICH, VS

机构：

[1] Institute of Inorganic Chemistry, USSR Academy of Sciences, Novosibirsk

来源：

PHYSICA C | 1991年 / 185卷

关键词：

D O I：

10.1016/0921-4534(91)91103-B

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MO CVD processes are promising for reliable and flexible preparation of HTSC films and coatings even on large surfaces of different shape. For DPM complexes of Cu and Y characteristics of decomposition process were obtained. Ba DPM complex was shown to be unstable. To replace this compound a new variety of Ba -diketonate (with alcoxy-ligands) is proposed. This type of compounds for other components of HTSC phases are synthesized and studied. Fluorinated carboxylates are also shown to be prospective for preparation of buffer layers and in lithographic processes in HTSC devices technology.

引用

页码：1957 / 1958

页数：2