POSSIBILITY OF INFRARED-LASER IN A RESONANT TUNNELING STRUCTURE

被引：52

作者：

KASTALSKY, A ^{[1
]}

GOLDMAN, VJ ^{[1
]}

ABELES, JH ^{[1
]}

机构：

[1] DAVID SARNOFF RES CTR,PRINCETON,NJ 08543

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 21期

关键词：

D O I：

10.1063/1.105922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We analyze the possibility of creating population inversion and optical gain in a specially designed resonant tunneling superstructure when the energy between active quantum levels is greater than the optical phonon energy. Each of twenty periods of the structure represents a complete resonant tunneling, double quantum well diode designed to provide escape time from the lower level of the active well much shorter than the electron-optical phonon relaxation time. Three heterostructure materials are considered: InAs/AlSb, InGaAs/AlAs, and GaAs/AlAs. In all three cases optical gains of 50-90 cm-1 were calculated to be present for the photon energy of almost-equal-to 0.1 eV.

引用

页码：2636 / 2638

页数：3

共 12 条

[1]

CHOI KK, 1987, APPL PHYS LETT, V51, P936

[2]

CLISE BO, 1990, APPL PHYS LETT, V57, P503

[3] NONTHERMAL OCCUPATION OF HIGHER SUBBANDS IN SEMICONDUCTOR SUPERLATTICES VIA SEQUENTIAL RESONANT TUNNELING [J].