DAMAGE OF SILICON INDUCED BY LOW-ENERGY AR MAGNETRON DISCHARGES

被引：5

作者：

CHEN, FY

LIN, I

LIN, CH

机构：

[1] Natl Central Univ, Ch lngli, Taiwan, Natl Central Univ, Ch lngli, Taiwan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1987年 / 2卷 / 08期

关键词：

ARGON - GLOW DISCHARGES - MICROWAVE MEASUREMENTS - PLASMAS - Magnetoplasma;

D O I：

10.1088/0268-1242/2/8/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The physical damage induced in silicon by argon magnetron discharges has been studied. The surface trap density measured with the high-low frequency capacitance-voltage method was used to evaluate the degree of damage on the substrate. No damage is found for substrates sputter-etched in an rf discharge with 30 eV mean ion energy. Substrates sputter etched in 450 eV dc discharge show damage similar to that obtained in other glow discharge or ion milling systems with the same energy.

引用

页码：533 / 536

页数：4