POLY(SILOXANE)-BASED CHEMICALLY AMPLIFIED RESIST CONVERTIBLE INTO SILICATE GLASS

被引：7

作者：

ITO, T

SAKATA, M

ENDO, A

JINBO, H

ASHIDA, I

机构：

[1] OKI ELECT IND CO LTD,CTR VLSI RES & DEV,HACHIOJI,TOKYO 193,JAPAN

[2] OKI ELECT IND CO LTD,DIV ELECTR DEVICES,CTR INTEGRATED CIRCUITS,HACHIOJI,TOKYO 193,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 12B期

关键词：

POLY(SILOXANE); SILICATE GLASS; CHEMICALLY AMPLIFIED RESIST;

D O I：

10.1143/JJAP.32.6052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel poly(siloxane)-based chemically amplified resist has been developed. The polymer is a glass precursor, and it can be converted to silicate glass through merely a lithographic procedure. The developed resist has a high sensitivity of 1.3 muC/cm2 and a high resolution of 0.1 mum lines and spaces. Simple and highly selective etching processes using the silicate glass mask obtained from this resist system have been proposed, which is substantiated in the bilevel resist process and tungsten-etching process.

引用

页码：6052 / 6058

页数：7

共 8 条

[1] LOW-TEMPERATURE ETCHING OF 0.2 MU-M A1 PATTERNS USING A SIO2-MASK [J].