RAMAN-SPECTRA OF SI-IMPLANTED GASB

被引：39

作者：

SU, YK ^{[1
]}

GAN, KJ ^{[1
]}

HWANG, JS ^{[1
]}

TYAN, SL ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV,DEPT PHYS,TAINAN,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.346994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The variations of Raman spectra for Si-implanted (100) GaSb with various doses and energies were investigated. Samples implanted at room temperature showed disorder or amorphous layer. In order to heal the damage layer, furnace annealing as well as rapid thermal annealing were used. We got a better structural recovery with increasing the annealing temperature or time, and rapid thermal annealing showed better results in comparison with conventional furnace annealing. The relative intensities of longitudinal optical phonons from Raman spectra by rapid thermal annealing samples were compared with those of unimplanted GaSb. It is found that a better recovery of damage layer is formed comparable to an unimplanted wafer when the annealing temperature is 600 °C for 30 s.

引用

页码：5584 / 5587

页数：4

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