ABINITIO STUDY OF LOW-LYING ELECTRONIC STATES OF THE FNO2 MOLECULE

被引:3
作者
CAI, ZL
WANG, YF
XIAO, HM
机构
[1] Department of Chemistry, East China Institute of Technology, Nanjing
关键词
D O I
10.1002/qua.560450108
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ab initio electronic structure calculations are reported for low-lying electronic states, 1A1, 1A2, 3A2, B-1(1), B-3(1), B-1(2), and B-3(2) of the FNO2 molecule. Geometric parameters for the ground state 1A1, are predicted by MRSDCI Calculations with a double-zeta plus polarization basis set. The vertical excitation energies for these electronic states are determined using MRSDCI/DZ+P calculations at the ground-state equilibrium conformation. The oscillator strengths and radiative lifetimes for some electronic states are calculated based on the MRSDCI wave functions.
引用
收藏
页码:51 / 57
页数:7
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